【摘要】 采用直拉法生长普通硅单晶和掺氮硅单晶,研究两种晶体中空位型原生缺陷(voids)和氧化诱生层错(OSFs)的行为。从两种晶体的相同位置取样,并对样品进行Secco腐蚀、1100℃湿氧氧化和铜缀饰实验。实验结果表明,在掺氮硅单晶中与较大尺寸的voids相关的流动图形缺陷(FPDs)的密度变小,氧化诱生层错环(OSF-ring)向样片中心处移动,同时宽度变大。这说明在直拉硅中掺氮可以抑制大尺寸voids的产生,同时可以缩小空位型缺陷区的范围,而且V/I过渡区(OSF-ring)的范围变大。更多还原

【Abstract】 The distribution behaviors of vacancy-type grown-in defects and OSF-ring in NCZ and CZ silicon were investigated.The samples were taken from the same position of the crystals and were etched by Secco and oxidated in wet oxygen at 1100 ℃ and decorated by copper.It was found that the density of FPDs related to voids with larger size in nitrogen-doped silicon was smaller than that in nitrogenfree silicon and the OSF-ring in the nitrogen-doped silicon moved towards the center and the width became larger.It was suggested that nitrogen doping could suppress the formation of voids with larger size and reduce the area of voids.更多还原