【摘要】 分析了硅片双面磨削的运动轨迹,并给出了砂轮上P点相对于硅片的运动轨迹。还对砂轮运动轨迹进行了模拟。得出以下结论:砂轮上P点在硅片上的运动轨迹仅与它们的相对转速比I有关,而与两者的分别转动角速度值没有关系。硅片磨削的磨纹密度沿着硅片径向逐渐减小,硅片中心处磨纹最密集,磨纹密度最大,表面粗糙度最小,越靠近硅片的中心硅片的磨纹密度越大,表面粗糙度越小,表面质量越好;反之,越靠近硅片的边缘磨纹密度越小,表面粗糙度越大,表面质量越差。砂轮和硅片旋转方向相同时单颗磨粒的轨迹带有紫荆花形状,说明其磨削是不均匀的,磨削效果不好;而砂轮和硅片旋转方向相反时单颗磨粒的轨迹则不具有这种形状,磨削很均匀,磨削效果好。硅片磨纹密度是由砂轮和硅片的速比决定的,速比ωwωs的不可约分数m/n中n越大,硅片磨纹密度越密,表面粗糙度越小,磨削表面质量越好。更多还原

【Abstract】 The orbit of double-side grinding was analyzed,the orbit equation of point p in wheel to wafer was inferred.The orbit of DSG movement was simulated by using Matlab.The experiment result showed that the orbit of point p in wheel to wafer did not decided by the velocity of wheel and wafer,but decided by their velocity ratio.The mark density got smaller along the direction from center to periphery,the mark was the densest and the surface roughness was smallest in wafer center.The mark density became larger,surface roughness became smaller and surface quality became better when it was near to the wafer center.By contrast,the mark density became smaller,surface roughness became bigger and surface quality became worse when it was near to the wafer edge.The orbit of single particle had a cercis flower map when the wheel and wafer rotated in the same direction.It meant that this grinding process was not good at surface quality.The orbit of single particle had no redbud map when the wheel and wafer rotated in the opposite direction,it meant that this grinding process is good at surface quality.The mark density of silicon wafer decided by their velocity ratio of wheel and wafer,the mark density became larger,surface roughness became smaller and surface quality became better when n in the irreducible fraction m/n of velocity ratio ωw/ωs became bigger.更多还原