【摘要】 采用有限体积元法软件CrysVUn对直拉法生长300mm硅单晶热场和热应力分布进行了模拟,模拟考虑了热传导、辐射、气体和熔体对流、热弹性应力等物理现象。针对晶体生长过程中小形变量的塑性形变,以Cauchy第一和第二运动定律作为局部控制方程,考虑了硅单晶的各向异性,计算了<100>硅单晶生长过程中晶体内von Mises应力分布和变化规律,结果表明在等径生长阶段热应力上升最显著,界面上方晶体内热应力随晶体生长速率增大而升高。更多还原

【Abstract】 A finite volume software CrysVUn was used for the simulation of heat field and stress distribution of 300 mm Si crystal,phenomena as conduct,radiation,convection and thermal elastic stress were considered.Aiming at small plastic shape change during crystal growth process,the internal stress distribution and variety rule of <100> Si crystal von Mises stress were analyzed.During the crystal growth process,the governing partial equations were Cauchy′s first and second law of motion,and anisotropy of Si single crystal was considered.The results demonstrated that von Mises stress increased remarkably during the body growth process and the thermal stress above the interface increased with the crystal growth rate increasing.更多还原