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退火温度对Nb掺杂SrTiO3薄膜光电化学性能的影响(英文)

Influence of Annealing Temperature on Photoelectrochemical Performance of Nb-doped SrTiO3 Film

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【作者】 王改田涂江平王淑芬王秀丽

【Author】 WANG Gai-tian, TU Jing-ping, WANG Shu-fen, WANG Xiu-li(Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China)

【机构】 浙江大学材料科学与工程系浙江大学材料科学与工程系 浙江杭州310027浙江杭州310027

【摘要】 研究了Nb掺杂SrTiO3薄膜的光电化学性能及其对储氢合金薄膜的光充电性能。采用射频磁控溅射将SrTiO3薄膜沉积在镍片基体上,在300~600℃退火处理后,采用直流磁控溅射将LaNi3.9Al1.3储氢合金薄膜沉积在镍片基体的背面构成SrTiO/Ni/储氢合金电极。随着Nb掺杂SrTiO薄膜热处理温度的升高,阳极光电流和光充电性能先增大后减小。

【Abstract】 The photoelectrochemical performances of Nb-doped SrTiO3 films and their photochargeability to hydrogen storage alloy films were investigated. The Nb-doped SrTiO3 films were deposited on nickel substrate by rf magnetron sputtering. After annealed at 300~600℃, the LaNi3.9Al1.3 hydrogen storage alloy films were deposited on the back of the Ni substrate by DC magnetron sputtering to form the Nb-doped SrTiO3/Ni/hydrogen storage alloy (SHN) electrodes. With increasing the annealing temperature of the SrTiO3 film, the anodic photocurrent and photochargeability first increased, then decreased.

  • 【文献出处】 中山大学学报(自然科学版) ,Acta Scientiarum Naturalium Universitatis Sunyatseni , 编辑部邮箱 ,2007年S1期
  • 【分类号】TM910.4
  • 【被引频次】1
  • 【下载频次】142
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