【摘要】 采用中频交流磁控溅射方法,在Mo层上沉积了CuInGa(CIG)预制膜,采用固态硒化法制备获得了Cu(In1-xGax)Se(2 CIGS)吸收层薄膜,考察了硒源温度对CIGS薄膜结构和形貌的影响。采用SEM和EDS观察和分析了薄膜的表面形貌和成分,采用XRD表征了薄膜的组织结构。结果表明,在不同的硒源温度下制备的CIGS薄膜,均为黄铜矿相结构,薄膜具有(112)面的择优取向。当硒源温度为575℃、580℃和585℃时,CIGS薄膜表面结构疏松,多孔隙;当硒源温度为590℃、595℃和600℃时,CIGS薄膜结构致密,表面平整。当硒源温度为600℃时,Cu、In和Ga原子含量处于制备弱p型CIGS吸收层薄膜的理想范围。更多还原

【Abstract】 CuInGa(CIG) precursory layer was deposited on the Mo-coated glass substrate by medium-frequency a.c.magnetron sputtering process where the CuIn and CuGa targets sputter altarnately.Then,the Cu(In1-xGax)Se2(CIGS) absorbing layer was obtained by the selenylation of CIG layer in the atmosphere of Se vapor and Ar carrier gas.The CIGS films were characterized with XRD,SEM and EDS(energy dispersive spectroscopy) to investigate the microstructure,morphology and composition of the thin films thus prepared.The results showed that regardless of the Se source temperature,the microstructures of CIGS films are all of chalcopyrite phase with a(112) preferred orientation.The CIGS thin films are loose and porous in surface when the Se source temperature is at 575℃ and 585℃,while they become compact with flat surface at 590℃ and 600℃.The atomic ratios of Cu,In and Ga come to an ideal range for the preparation of weak p-type CIGS absorbing alayers at 600℃.更多还原