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BaTiO3/CoFe2O4/BaTiO3复合磁电薄膜生长及应力研究
Growth and Interfacial Strain of BaTiO3/CoFe2O4/BaTiO3 Magnetoelectric Multilayers
【摘要】 用激光分子束外延(LMBE)设备,在SrTiO3(001)基片上外延生长BaTiO3/CoFe2O4/BaTiO3多层复合磁电薄膜结构。通过反射式高能电子衍射(RHEED)对薄膜生长过程进行原位监测,结果显示,随着CoFe2O4厚度的增加薄膜内应力逐渐被释放,并且应力释放的过程导致了薄膜生长模式的变化。高分辨X射线衍射(XRD)发现,随着CoFe2O4厚度的增加,CoFe2O4对BaTiO3薄膜的张应力逐渐增大,BaTiO3晶胞的c轴晶格常数逐渐变小。理论计算给出了BaTiO3面外晶格常数c随CoFe2O4沉积时间的变化规律。原子力显微镜(AFM)对表面形貌进行表征,进一步证明了复合薄膜生长模式的变化。
【Abstract】 Growth of BaTiO3/CoFe2O4/BaTiO3 magnetoelectric multilayers on SrTiO3 substrate by laser molecular beam epitaxy(LMBE) was monitored in-situ with reflection high energy electron diffraction(RHEED).The microstructures of the multilayer were characterized with high resolution X-ray diffraction(XRD) and atomic force microscopy(AFM).The results show that as the thickness of CoFe2O4 layer increases,the interfacial stress gradually relaxes,resulting in changes of film growth mode;in contrast,the strain on BaTiO3 exerted by CoFe2O4 slowly increases,leading to a shrink of c-axis of the BaTiO3 unit cell.The variations in the c-axis with deposition time of CoFe2O4 were also calculated.AFM images confirm the change in the growth mode.
【Key words】 Magnetoelectric film; Interfacial strain; RHEED; Growth mode;
- 【文献出处】 真空科学与技术学报 ,Chinese Journal of Vacuum Science and Technology , 编辑部邮箱 ,2007年05期
- 【分类号】O484
- 【被引频次】8
- 【下载频次】298