【摘要】 利用Ar~+离子束混合技术在不锈钢基体上沉积C-SiC涂层,然后对部分样品进行加热去氩处理(400℃,30min),再用5keV氢离子源辐照样品。通过扫描电镜(SEM)的表面形貌观察、二次离子质谱仪(SIMS)的H与Ar元素深度分布和正离子质谱分析,研究去氩处理对氢离子辐照的C-SiC涂层的形貌和阻氢性能的影响。结果表明,经去氩处理,样品中不锈钢基体内的氢浓度降低了80%,显示出去氩处理的C-SiC涂层具有更高的阻氢性能。研究结果将为该技术应用于不锈钢基体上C-SiC涂层制备工艺的进一步改善提供依据。更多还原

【Abstract】 C-SiC films were deposited on the surface of stainless steel using ion beam mixing.In order to eliminate argon,some of the samples were heat-treated for 30 min at 400℃before all were irradiated by 5 keV hydrogen ion beam.Scanning electron micro- scope(SEM)was used to analyze surface microtopology.Secondary ion mass spectrom- etry(SIMS)was used to analyze the depth distribution of H and Ar and mass spectra of positive species.The effect of eliminating argon by heat-treatment on the surface struc- ture and hydrogen resistance of C-SiC films was studied.It is found that the concentra- tion of hydrogen in stainless steel substrates after eliminated argon by heat-treatment is reduced 80%.This means that the technical of eliminating argon by heat-treatment can effectively improve hydrogen resistance of C-SiC films,which offers the theory proof of technical improvement in practical application.更多还原