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空气氧化法对纳米碳管场发射性能的影响(英文)

Effects of Air Oxidation on Field Emission Properties of Carbon Nanotubes

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【作者】 张哲娟孙卓张燕萍杨介信冯涛陈奕卫

【Author】 ZHANG Zhe-juan1, SUN Zhuo1, ZHANG Yan-ping1, YANG Jie-xin2, FENG Tao1, CHEN Yi-wei1(1.Engineering Research Center for Nanophonics & Advanced Instrument, Ministry of Education, East China Normal University, Shanghai 200062,China,2.Shanghai Sunlights Technology Co. Ltd., Shanghai 200062, China)

【机构】 华东师范大学纳光电集成与先进装备教育部工程研究中心上海芯光科技有限公司华东师范大学纳光电集成与先进装备教育部工程研究中心 上海200062上海200062

【摘要】 以镍金属为催化剂,在600℃条件下,采用化学气相沉积法(CVD)制备碳纳米管。将制得的碳纳米管用高能球磨法处理0.5~1h后,以空气氧化法进行提纯,并研究了氧化温度对碳纳米管形貌和场发射性能的影响。用扫描电镜、Raman光谱分别对300~500℃的氧化提纯后的碳纳米管的形貌和结构进行了表征。结果表明:碳纳米管的场发射性能随温度的升高而升高,经400~450℃加热10min后,非晶碳成分减少,碳管纯度得到提高,场发射性能达到最高;当氧化温度继续升高时,碳纳米管的缺陷密度增大,非晶化程度增加,场发射特性变差。因此,通过控制氧化温度可以有效提高碳纳米管的纯度和场发射性能。

【Abstract】 Multiwall carbon nanotubes (CNTs) were prepared by the catalytic decomposition of acetylene at 600 ℃ using Ni as catalysts, and then were treated by ball-milling for 0.5~1 h. The treated CNTs were purified by removing most of amorphous carbon using air oxidation method at 300~500 ℃. The morphologies and field emission properties of the oxidized CNTs were changed, mainly depending on the oxidation temperature. The field emission current density was increased to a maximum, and then decreased with increasing the oxidation tempe-rature. When the CNTs were oxidized at 400 ℃ for 10 min, the field emission current density reached to 126.5 μA/cm2 at the applied field of 4.41 V/μm. As a result, the most of amorphous carbon was removed and the purity of the CNTs was improved greatly. When the oxidized temperature is 400~450 ℃, the purified CNTs showed excellent field emission properties, such as high emission current density and uniform luminescence spots distribution.

【关键词】 碳纳米管场发射球磨空气氧化
【Key words】 carbon nanotubefield emissionball millingair oxidation
【基金】 Supported by Shanghai Science Technology Committee ( No .0552nm006 , No .0652nm033 , No .05PJ14320 , No .06DZ11404 , No . 50672026 ,No . 05DZ05803) ;Development Program of High Technology and Innovation of Shanghai Economic Committee ;Project of Key Laboratory of Advanced Display and System Applications (Shang-hai University),Ministry of Education(No .P200503)
  • 【文献出处】 液晶与显示 ,Chinese Journal of Liquid Crystals and Displays , 编辑部邮箱 ,2007年05期
  • 【分类号】TN304.05
  • 【被引频次】2
  • 【下载频次】91
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