节点文献
双槽电化学腐蚀法制备多孔硅的研究
Study on Preparing Porous Silicon by Double-cell Electrochemistry Etching
【摘要】 论述了多孔硅的特点和制备方法,简单介绍双槽电化学腐蚀法的特点,并采用双槽电化学腐蚀法成功制备了多孔硅。多孔硅的扫描电镜(SEM)照片表明,孔径尺寸小,均匀性好,腐蚀结构规则。实验结果表明,衬底导电类型影响着多孔硅的制备条件。
【Abstract】 The characteristic and preparing of porous silicon were discussed.The porous silicon was successfully prepared by double-cell electrochemical etching.The SEM photos of porous silicon prepared by double-cell electrochemical etching were observed.The results show that the porous silicon obtained by this method has the smaller hole diameter,good uniformity,ordered etching structure.The type of substrate affect the condition of the porous silicon preparation.
【关键词】 牺牲层;
多孔硅;
双槽电化学腐蚀法;
【Key words】 sacrifice; porous silicon; double-cell electrochemical etching;
【Key words】 sacrifice; porous silicon; double-cell electrochemical etching;
【基金】 国家自然科学基金资助项目(90207022)
- 【文献出处】 压电与声光 ,Piezoelectrics & Acoustooptics , 编辑部邮箱 ,2007年06期
- 【分类号】TN304.12
- 【被引频次】13
- 【下载频次】398