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利用原子芯片上Z形磁阱囚禁中性⁸⁷Rb原子

A Z-trap in an atom chip for trapping neutral ⁸⁷Rb atoms

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【Author】 Li Xiao-Lin 1)2) Ke Min 1)2)Yan Bo 1)2)Tang Jiu-Yao 3)Wang Yu-Zhu 1)2)1)(Key Laboratory for Quantum Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)2)(Center for Cold Atomic Physics,Chinese Academy of Sciences,Shanghai 201800,China)3)(Department of Physics,Zhejiang University,Hangzhou 310027,China)

【机构】中国科学院上海光学精密机械研究所量子光学重点实验室；浙江大学物理系；中国科学院上海光学精密机械研究所量子光学重点实验室上海201800中国科学院冷原子物理中心；上海201800；上海201800中国科学院冷原子物理中心；杭州310027；

【摘要】利用解析和数值方法计算了Z形磁阱的囚禁势,发现当囚禁中心和芯片表面距离较远时(该距离和Z形线中部导线的一半长度相差不超过一个量级),势阱的深度不能近似表示成偏置磁场By对应的能量,而要减去囚禁中心的势能高度;而增加By进行磁阱压缩到一定值时,势阱深度反而会下降.此外介绍了原子芯片的制作方法,以及利用原子芯片上Z形磁阱囚禁中性87Rb原子的实验装置和实验过程.最终有2×106个87Rb原子被转移到Z形磁阱中.更多还原

【Abstract】 Trapping potential of a Z-trap is calculated with analytic and numeric methods.It’s found that when a trapping center is a little bit far from the chip surface(the distance is about one order of the half length of the Z-wire central part),the trapping depth is not approximately eqsual to the potential B_y created by a bias magnetic field,the potential energy at the trapping center should be subtracted from the potential B_y created by the bias field.On the other hand,if an atom cloud is compressed to a certain extent by increasing B_y,the trapping depth will be decreased rather than increased.The preparation of the Z-trap in an atom chip,the experimental setup,and the experimental procedure for trapping neutral 87Rb atoms is also introduced.At last we obtained 2×106 87Rb atoms trapped in the Z-trap.更多还原