【摘要】 应用化学电共沉积法在Ti片、导电玻璃和导电PI基片上制备了GaAs多晶薄膜,并在薄膜上应用电子束蒸发淀积了一层超薄的SiOx,然后采用PVD法在其上淀积一层金属薄层,制备出MIS结构的肖特基势垒。经测试Ag-SiOx-nGaAs结构和Au-SiOx-nGaAs结构的I-V特性,表明所制备的肖特基势垒具有良好的整流特性。更多还原

【Abstract】 The chemical electrodeposition approach to fabricate GaAs polyciystalline film on Ti slice, TCO glass and electric PI slice with an over-thin SiOx deposited on the film by using electron beam evaporation was presented in this paper. Schottky barriers of MIS structure was grown on the SiOx film by depositing a metal film with PVD approach. The grown schottky barriers show good rectifier characteristics by testing the I-V characteristics of the structure of Ag-SiOx-nGaAs and Au-SiOx-nGaAs.更多还原