【摘要】 用溶胶-凝胶工艺在掺锡氧化铟导电氧化物基底上制备了锆钛酸铅(PZT)铁电薄膜.采用快速热处理工艺改进铁电薄膜的晶格取向,用X射线衍射仪分析了薄膜的结晶取向,分别基于Al/PZT/ITO,ITO/PZT/ITO电容结构利用Sawyer-Tower电路原理测试了薄膜的铁电性能.结果表明,在磁控溅射法生长的ITO表面能够制备出具有钙钛矿结构的(110)取向的PZT铁电薄膜,所得薄膜的相对介电常数达到1000,剩余极化强度Pr达到和Pt基底上接近的15.2 uc/cm2,矫顽场强Ec达到70.8 kV/cm.并且利用TF Analyzer 2000铁电分析仪测试了PZT铁电薄膜的疲劳特性,发现ITO底电极上PZT薄膜经过108次反转后,剩余极化强度仅下降15%.研究表明:磁控溅射法制备的掺锡氧化铟透明导电薄膜ITO可以作为铁电薄膜的上下电极.更多还原

【Abstract】 Pb(ZrxTi1x)O3(PZT) lead zirconate titanate thin films were prepared and characterized on indium tin oxide(ITO) by sol-gel process.Crystal orientation of the film was improved by rapid thermal annealing process,and analyzed by X-ray diffraction.Also electrical properties of thin films were tested using the principle of Sawyer-Tower circuit based on Al/PZT/ITO and ITO/PZT/ITO capacitance structure respectively.The testing result shows that PZT thin films with the perovskite structure(110) oriention can be prepared on ITO,the relative dielectric constant of the film,as high as 1 000,was measured;strengths of remnant polarization and coercive fields of the film reached 15.2 uc/cm2 and 70.8 kV/cm respectively.Using the TF Analyzer 2000,the fatigue properties of the PZT thin film on ITO were tested,and remnant polarization strength decreased only by 15% after 108 cycles.It is concluded that transparent conductive oxide thin film ITO prepared by magnetron sputtering can be served as the electrodes of PZT thin film.更多还原