【摘要】 基于各层金属间在快速热退火时容易合金化及Ti,Al易被氧化的特点,在高Al组分N-AlxGa1-xN(x≥0.45)材料上溅射生长多层金属Ti/Al/Ti/Au,并且变化Ti,Al比例以及改变退火温度和时间,得到了金属与高Al组分N-AlxGa1-xN(x≥0.45)材料间的欧姆接触,由传输线模型方法测试得比接触电阻为4.9×10-2Ω.cm2。实验中用到的样品为P(Al0.45Ga0.55N)/i(Al0.45Ga0.55N)/N-Al0.63Ga0.37N多层结构的材料。最后,利用伏安特性和俄歇电子能谱深度分布(AES)研究金属与高Al组分的材料之间形成欧姆接触的原因。更多还原

【Abstract】 Based on the feature of alloying among dual metals and Ti/Al easily oxidized at RTP condition,by depositing a Ti/Al/Ti/Au layer structure on high Al contents N-AlxGa1-xN(x≥0.45) surface,changing the ratio of Ti/Al and altering annealing temperature and time,ohmic contacts whose contact resistance is 4.9×10-2Ω·cm2 via TLM measurements between four-layer metals Ti/Al/Ti/Au and high Al content N-AlGaN material was made.The sample used in the experiment was multi-layer material with the P(Al0.45Ga0.55N)/i(Al0.45Ga0.55N)/N-Al0.63Ga0.37N structure.Finally,the reason for forming ohmic contact is investigated by use of I-V measurements and AES depth profile.更多还原