【摘要】 文中计算了A lGaN材料在不同温度KOH水溶液中的湿法腐蚀速率,并研究了湿法化学腐蚀GaN基材料对消除干法刻蚀所引入损伤的作用。为了对比湿法化学腐蚀消除干法刻蚀损伤的效果,分别利用扫描电子显微镜(SEM)、原子力显微镜(AFM)和俄歇电子能谱(AES)对比Ar+干法刻蚀后经湿法化学腐蚀处理和未经处理的表面形貌及组分,并制作了单元可见盲器件,测试其反向漏电流,发现在干法刻蚀后引入湿法化学腐蚀工艺可使器件的反向漏电流得到较大程度的减小。更多还原

【Abstract】 In this paper,the wet chemical etching rate of AlGaN in different temperature of KOH aqueous solution was calculated and discussed.It was also found that wet chemical etching after dry etching can effectively eliminate the damage introduced by dry etching process and improve the device performance.The surface morphologies and the compositions of both sets were observed by scanning electron microscopic(SEM),atomic force microscopic(AFM) and Auger electron spectroscopy(AES).The leakage currents of visible-blind devices were compared.It is obvious that dry etching damages and devices leakage current are reduced after wet chemical etching.更多还原