【摘要】 设计了适合于倒装的大功率GaN基LED芯片结构,在倒装基板硅片上制作了金凸点,采用热超声倒装焊接(FCB)技术将芯片倒装在基板上。测试结果表明获得的大面积金凸点连接的剪切力最高达53.93g/bump,焊接后的GaN基绿光LED在350mA工作电流下正向电压为3.0V。将热超声倒装焊接技术用于制作大功率GaN基LED器件,能起到良好的机械互连和电气互连。更多还原

【Abstract】 A high-power GaN-based LED chip structure fitted for flip-chip was designed, and the Au bumps were fabricated on Si substrate. Then the LED chip was bonded to the Si substrate by thermosonic flip chip bonding (FCB). The test results showed that the shear force of the large area Au bumps connection was 53.93 g/bump, and the forward voltage of high-power GaN-based green LED after thermosonic FCB was 3.0 V under the working courrent of 350 mA. Good mechanical and electrical connections could be obtained by applying thermsonic FCB on fabricating high-power GaN-based LED devices.更多还原