【摘要】 基于CSMC 0.5μm CMOS工艺,采用CMOS技术,设计一种高性能的带隙基准电压源.带隙基准电压源输出电压经过电平转换电路,反馈回带隙基准电压源中的运算放大器,可以获得良好的电源特性和带负载能力.采用可修调电阻阵列,精确地控制温度系数.仿真结果表明:在5 V电源电压下,温度系数为8.28×10-6/℃,低频电源抑制比为83 dB.更多还原

【Abstract】 A high-powered bandgap reference voltage source was designed and discussed.The bandgap reference voltage source used the structure that the output voltage through voltage level shift circuit was fed back to provide the power for the bandgap reference voltage source′s operational amplifier to reach high power character and heavy load.The temperature coefficient could be controlled precisely by trimming resistors.The bandgap reference was designed in central semicondnctor manufacturing corporation(CSMC) 0.5 μm complementary metal-oxide-semiconductor(CMOS) process with 5 V power supply and achieved temperature coefficient of 8.28×10-6/℃ and 83 dB power supply rejection ratio(PSRR).更多还原