【摘要】 本文通过溶胶-凝胶的方法在Si单晶片上制备了定向生长的双钙钛矿结构的巨磁电阻薄膜材料Sr2FeMnO6(SFMO)。X射线衍射结果表明,该SFMO薄膜在硅单晶片上成相情况较好,薄膜为多晶结构,晶格常数a=78.916 nm、b=75.995 nm、c=103.686 nm。电流-电压(I-V)特性曲线表明SFMO具有类似于p-n结的整流特性。SFMO独特的电学性质,有可能在某些应用领域中被用作为半导体的替代材料;同时由于SFMO的电输运行为与磁学行为的相互关联,使得SFMO在电子自旋器件的应用成为可能。更多还原

【Abstract】 Using Sol-Gel method,the epitaxial double perovskite(SFMO) thin film was prepared on the Si(100) wafer.The X-ray diffraction technique was used to analyze microstructure of SFMO film.The results showed that: SFMO film was well structured.The film which was on the surface of the Si substrate was multicrystal. The lattice of SFMO film constants were a=78.916 nm、b=75.995 nm、c=103.686 nm.The I-V curve showed that SFMO film had the rectification properties,which was alike the I-V properties of p-n junction.Because SFMO had unique electric and magnetic behaviors,they could be used as peculiar semiconductor material of the special electronic devices.更多还原