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PT/PZT/PT薄膜微力传感器
Microforce sensors based on PT/PZT/PT thin films
【摘要】 提出了一种基于PT/PZT/PT压电薄膜微悬臂梁结构的微力传感器。运用Sol-Gel(溶胶-凝胶)法制作了PT和PZT薄膜,采用X射线衍射技术表征了PZT和PT/PZT/PT两种薄膜的成相特征,用阻抗分析仪测试了PZT和PT/PZT/PT薄膜的介电常数。结果表明,在PZT薄膜退火温度同为600℃时,PZT和PT/PZT/PT薄膜均为完整的钙钛矿结构,而且PT/PZT/PT薄膜沿(100)晶向强烈取向;在测试频率为1 kHz时,经600℃热处理条件下制备的PZT和PT/PZT/PT薄膜的相对介电常数分别为525和981。最后应用MEMS工艺制作了基于PT/PZT/PT压电薄膜微悬臂梁结构的微力传感器。在静态和准静态下对微力传感器的传感特性进行了测试。测试结果表明,力与位移或电荷具有良好的线性关系。两种尺寸微力传感器的灵敏度分别为0.045 mV/μN和0.007 mV/μN,力分辨率分别为3.7μN和16.9μN,满足了微牛顿量级微小力的测量。
【Abstract】 A novel microforce sensor with microcantilever structure based on PT/PZT/PT piezoelectric thin films is proposed.The PT and PZT thin films are fabricated using Sol-Gel method.The PZT thin film and the PT/PZT/PT thin film are investigated using X-ray diffractometry.The measured dielectric constants of the thin films show that both thin films have pure perovskite tetragonal structure and the PT/PZT/PT thin film orients in pervoskite(100) strongly at the same anneal temperature of 600 ℃.The dielectric constants of the PZT thin film and the PT/PZT/PT thin film are 525 and 981 at 1 kHz,respectively.Finally,the microforce sensors are fabricated using MEMS techniques and the sensing properties of microforce sensor are measured in static state and quasi-static state.The results show that it has good linearity between force and deflection or charge.The sensitivities of two kinds of size microforce sensors are 0.045 mV/μN and 0.007 mV/μN in quasi-static state with resolution of 3.7 μN and 16.9 μN,respectively.The measurement of microforce can satisfy the need of micro-Newton level.
【Key words】 PT/PZT/PT thin film; microcantilever; microforce sensor;
- 【文献出处】 光学精密工程 ,Optics and Precision Engineering , 编辑部邮箱 ,2007年09期
- 【分类号】TP212
- 【被引频次】21
- 【下载频次】596