【摘要】 模拟计算了光的入射角度与反射率的关系,当光的入射角度大于23°时,发生全反射,无论是否在器件表面生长增透膜,这时的光都无法从器件顶部出射表面提取出来。研究了使用等离子体增强化学气相沉积法(PECVD)在已经制备了n电极和p电极的GaN基LED上制备钝化膜,分析了SiON和SiN_x膜沉积对于器件的光输出功率的影响。通过实验证明,在器件上沉积SiON后,光输出功率增加。更多还原

【Abstract】 In this paper,we simulate the relationship between the reflectivity and the light incident angle.When the incident angle is more than 23°,the light can not be extracted from LED top emitting surface.We fabricate SiON and SiN_x films respectively at low temperature (100℃) through Plasma Enhanced Chemical Vapor Deposition (PECVD) to serve as the passivation layer of GaN-LEDs,and then compare their light output power.The light output power of the LED improved greatly after depositing the SiON passivation layer.更多还原