【摘要】 本文在无紫外光照射下通过电化学腐蚀法制备了多孔n型15R-及6H-SiC,并用扫描电子显微镜(SEM),拉曼散射及X射线衍射仪(XRD)对多孔层的结构进行了分析。结果表明:晶体的晶型及氧化条件等因素对多孔结构有较大影响。首次观察到多孔n型15-SiC的半圆管状结构,其孔隙率约是66%。更多还原

【Abstract】 The porous n-type 15R-SiC and 6H-SiC were prepared by electrochemical etching without external illumination.The porous layers were analyzed using scanning electron microscopy(SEM),Raman scattering,and X-ray diffraction(XRD). The porous structures depend on the crystal structure of substrates and anodization conditions.For the porous 15R-SiC,the semi-cylinder structure of the porous network has been observed and the porosity is about 66%.更多还原