【摘要】 在较高工作气压(332.5~399Pa)下,采用等离子增强化学气相沉积(PECVD)工艺制备了优质的本征纳米硅薄膜及掺磷的纳米硅薄膜,并采用X射线衍射(XRD)、拉曼散射(Raman)测试技术对其进行了测试和分析。结果表明纳米硅薄膜的XRD谱中存在(111)(、220)和(331)峰位;Raman谱中显示出其薄膜中的晶粒的大小(2~5nm)符合纳米晶的要求。将制备的纳米硅薄膜初步用于栅极/ITO/n-nc-Si∶H/i-nc-Si∶H/p-c-Si/Al/Ag结构的异质结(HIT)太阳能电池,开路电压(Voc)达404mV,短路电流密度(Jsc)可达到34.2mA/cm2(AM1.5,100mW/cm2,25℃)。更多还原

【Abstract】 Nano-crystalline silicon films(nc-Si∶H) were prepared by plasma enhanced chemical vapor deposition(PECVD) under the high deposition pressure(332.5-399Pa),which was used for the HIT solar cells(grid electrode/ITO/ n-nc-Si∶H/i-nc-Si∶H/p-c-Si/Al/Ag) with nano-crystalline silicon (nc-Si∶H) film as the intrinsic layer and doped nano-crystalline silicon film as the N-layer.The structure of the film was investigated by XRD and Raman.The results show that the size of crystal grains was about 2-6nm,the peaks of(111),(220) and(331) could all been shown in the XRD spectrum.Performances of the solar cell were measured,the open-circuit voltage Voc was 404mV,short-circuit current Jsc was 34.2mA/cm2(1.5AM,100mW/cm2)更多还原