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Damaging Effect of Low Energy N~+ Implantation on Aspergillus niger Spores

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【作者】 王力生蔡克周程茂基陈丽娟刘雪兰张束清余增亮

【Author】 WANG Lisheng CAI Kezhou CHENG Maoji CHEN Lijuan LIU Xuelan ZHANG Shuqing YU Zengliang ~1 Department of Animal Science and Technology,Anhui Agricultural University,Hefei 230036,China ~2 Key Laboratory of Ion Beam Bioengineering,Institute of Plasma Physics,Chinese Academy of Science,Hefei 230031,China

【机构】 Department of Animal Science and Technology,Anhui Agricultural University,Hefei 230036,ChinaKey Laboratory of Ion Beam Bioengineering,Institute of Plasma Physics,Chinese Academy of Science,Hefei 230031,China

【摘要】 <正> The mutant effects of a keV range nitrogen ion(N~+)beam on enzyme-producingprobiotics were studied,particularly with regard to the induction in the genome.The electronspin resonance(ESR)results showed that the signal of ESR spectrum existed in both implantedand non-implanted spores,and the yields of free radicals increased in a dose-dependent manner.The ionic etching and dilapidation of cell wall could be observed distinctly through the scanningelectron microscope(SEM).The mutagenic effect on genome indicated that N+ implantation couldmake base mutation.This study provided an insight into the roles low-energy ions might play ininducing mutagenesis of micro-organisms.

【Abstract】 The mutant effects of a keV range nitrogen ion(N~+)beam on enzyme-producing probiotics were studied,particularly with regard to the induction in the genome.The electron spin resonance(ESR)results showed that the signal of ESR spectrum existed in both implanted and non-implanted spores,and the yields of free radicals increased in a dose-dependent manner. The ionic etching and dilapidation of cell wall could be observed distinctly through the scanning electron microscope(SEM).The mutagenic effect on genome indicated that N+ implantation could make base mutation.This study provided an insight into the roles low-energy ions might play in inducing mutagenesis of micro-organisms.

【基金】 supported by National Natural Science Foundation of China.(No,30100134)
  • 【文献出处】 Plasma Science and Technology ,等离子体科学和技术(英文版) , 编辑部邮箱 ,2007年03期
  • 【分类号】O539
  • 【被引频次】2
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