【摘要】 以可低温共烧的高介电常数微波陶瓷材料BiNbO4(εr=43)和Bi2O3-ZnO-Nb2O5(BZN,εr=76)为介质材料,在Al2O3陶瓷(εr=9.8)基板上采用厚膜印刷的方法制备了埋入式多层电容器。利用HP4294A精密阻抗分析仪对其电学参数进行了测试和分析,并利用三维电磁场仿真软件HFSS对其电学特性进行了仿真和优化设计。实验研究表明,采用本材料体系制备的埋入式厚膜多层电容器可以获得相当大的单位电容C0(717.5～744.3pF/cm2);并且其电学特性相当稳定,基本不受基板和上层电路板的影响。基于本材料体系的埋入式厚膜多层电容器可望在移动通讯组件和微波集成器件等领域得到广泛的应用。更多还原

【Abstract】 A multilayer embedded capacitor was fabricated on the substrate of alumina ceramic(εr=9.8)by screening printing,with low temperature co-fired ceramic BiNbO4(εr=43) and Bi2O3-ZnO-Nb2O5(BZN,εr=76)as dielectric materials,respectively.Its electricity parameters were tested and analyzed by HP4294A and its electrical properties were simulated and optimized by HFSS.The results show that the multilayer embedded capacitor is of high capacitance density C0(717.5～744.3 pF/cm2),and its characteristic was quite stable.It foreshows extensively potential applications in the fields of mobile communication devices and microwave integrated circuits,etc.更多还原