【摘要】 微波等离子体法合成的金刚石薄膜质量好,但常规小型微波等离子体沉积金刚石薄膜速率低,为此,本实验在H2-CH4系统中引入CO2来提高金刚石薄膜的沉积速率。研究了不同碳源体积分数、功率、压力对沉积速率、金刚石形貌、电阻率的影响。其规律是随着碳源体积分数的增加,金刚石膜的沉积速率增加;随着压力的增加,生长速率呈现一个先增后减的趋势;随着功率的增加,也存在一个先增后降的趋势。研究结果表明碳源体积分数对沉积速率影响最大。综合各种因素,得到在H2+CH4+CO2的条件下沉积金刚石薄膜的最佳工艺条件为:碳源体积分数为0.63%;C/O=1.086;功率为490W;压力为5.33kPa。引入CO2使沉积速率得到提高,为常规方法沉积速率的3倍左右,表明引入CO2是一种提高沉积速率的有效方法。更多还原

【Abstract】 The diamond with excellent quality was successfully synthesized by using MPCVD,but its growth rate was lower.H2/CH4/CO2 system was used to grow diamond film instead of H2-CH4 system.In order to improve its growth rate,the influence of different microwave power,concentration of carbon radicals and gas pressure on the resistivity,growth rate and surface morphology of diamond films have been studied.The experimental results indicate that the growth rate increased with the carbon radicals concentration increasing;the growth rate of diamond film increased at the initial stage,and then fell with the microwave power increasing,so did the gas pressure.Growth rate of diamond film mainly depended on the concentration of carbon radicals.The optimum conditions of diamond film preparation in H2-CH4-CO2 system are obtained:microwave power is 490W,concentration of carbon radicals is 0.63%(C/O=1.086) and gas pressure is 5.33 kPa.CO2 in the H2-CH4 system could improve the growth rate of diamond film,and it is about three times than that in H2/CH4 system.Accordingly,the addition of CO2 into H2-CH4 system is an available way to improve the growth rate.更多还原