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ITO薄膜的微观组织结构与光电性能研究

Microstructure and Photoelectric Properties of ITO Thin Films

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【作者】 曾胜男刘家祥张楠

【Author】 Zeng Shengnan, Liu Jiaxiang, Zhang Nan (The State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China)

【机构】 北京化工大学化工资源有效利用国家重点实验室北京化工大学化工资源有效利用国家重点实验室 北京100029北京100029

【摘要】 以金属铟和结晶四氯化锡为原料,采用溶胶-凝胶工艺,用浸渍提拉法在石英玻璃基体上制备ITO透明导电薄膜。采用XRD,AFM,四探针电阻率仪,紫外分光光度计对薄膜的晶型结构,表面形貌,方电阻和透光率进行了测定和分析,研究了热处理温度和提拉层数对薄膜光电性能的影响。结果表明:随着热处理温度的升高,薄膜的方电阻显著降低,透光率也不断增大,但是当后处理温度大于750℃时,透光率略有降低,方电阻仍然降低。

【Abstract】 ITO films were prepared on quartz glass by sol-gel dip-coating technique using metal ingots indium and hydrated stannic chloride as the raw materials. The microstructure and surface morphology of the films were analyzed by AFM and XRD. The sheet resistance and optical transmittance of the films were measured by using the four-point probe method and spectrophotometer. The effects of heat temperature and layers number on electrical and optical properties were also discussed. The results showed that the sheet resistance decreased and transmittance in creased gradually with increasing of heat treatment temperature, but the transmittance slightly decreased when heated temperature was above 750 ℃.

【基金】 国家高技术研究发展计划(“863”计划)基金资助项目(2004AA303542)
  • 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2007年10期
  • 【分类号】TB383.2
  • 【被引频次】7
  • 【下载频次】308
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