【摘要】 为了改善传统的双台面工艺受光刻设备和工艺精度限制这一缺陷,引入了掩埋金属自对准工艺.新工艺使SiGe HBT的制作不受最小光刻条宽的限制,从而有效利用了现有的光刻精度.由此工艺得到的器件测量结果证明,在不提高现有光刻设备精度的基础上,掩埋金属自对准工艺对器件的性能有了改进.更多还原

【Abstract】 Aiming at improving accuracy of photoetching technology in conventional double-mesa process,this article introduced buried-metal layers and developed silicon based buried-metal self-aligned process in order to increase the mesa area utilization efficiency.Novel process has advantages of smaller junction area,larger met- al-semiconductor contact area and fewer pinhole fabrication defects,with no increase of fabrication difficulties or advancement of photolithography equipments.更多还原