【摘要】 ULSI多层铜互连线中,由于Cu与Ta的硬度不同带来抛光速率的差异,使得在CMP过程中各种缺陷如碟形坑缺陷、磨蚀缺陷极易发生。研究分析了H2O2、有机碱对Cu和Ta抛光速率的影响,并进行了不同抛光液配比的试验。实验证明,在温度为30℃、压力0.08 MPa,转速60 r/min、抛光液流量为160 mL/min、抛光液成份为V(H2O2)∶V(有机碱)∶V(活性剂)∶V(螯合剂)=5∶15∶15∶25时,抛光速率一致性较好,能够有效降低碟形坑的出现几率;Cu、Ta的抛光速率均为500 nm/min左右,实现了CMP的全局平坦化。更多还原

【Abstract】 In copper multilayer interconnection of ULSI,the difference in polishing speeds,caused by the different hardness of Cu and Ta,leads to the easy occurance of various flaws in the CMP process,such as dishings and erosions.The influence of H2O2 and organic alkali on the polishing rates of Cu and Ta were analysed,and several experiments with different proportions of slurry were made.Experimental results show that under such conditions:30 ℃,0.08 Mpa,rotational speed of 60 r/min,flow rates of 160 mL/min,polishing slurry concentration ratio of V(H2O2):V(organic alkali):V(active agent):V(chelating agent) = 5:15:15:25,the uniformity of polishing rates become better,the occurance propability of dishings is effectively reduced,and the uniform rates of Cu and Ta is approximately 500 nm/min,thus realizing the global planarization of CMP.更多还原