【摘要】 介绍了S频段微波脉冲功率放大器模块的设计方法和试验研制过程。利用内匹配技术,采用混合集成电路制作,将四级芯片集成到微型封装的金属密封管壳中,前两级芯片采用GaAsMMIC电路,第三级采用GaAs FET晶体管,末级采用Si双极型晶体管完成功率放大,结合了GaAs器件电路和Si器件电路的各自优点。在S波段、带宽300 MHz频率范围内试制出Gp≥45 dB,Po≥30 W的功率放大器模块,模块的体积为27 mm×18.5 mm×5 mm。更多还原

【Abstract】 The design method and the process of microwave pulse power amplifier module in S band were presented.Some chips were integrated into a miniature metal closed-package by means of the technique of hybrid integrated circuit and the technique of intermatching.The power amplifier module is achieved in S band and 300 MHz frequency,the gain is over 45 dB,output power is over 30 W,and the module size is 27 mm×18.5 mm×5 mm.更多还原