【摘要】 采用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)技术,以SiH4和H2为气源,在350℃的低温条件下,在普通玻璃衬底上沉积了多晶硅薄膜。主要考察了中间层对多晶硅薄膜沉积质量的影响。实验证明,当中间层的沉积温度为350℃,H2流量为20 sccm时,得到多晶硅薄膜晶粒的直径最大,为53 nm;且随着中间层沉积温度的提高,薄膜的结晶度提高。更多还原

【Abstract】 Polycrystalline silicon films were deposited on glass substrates at 350 ℃ by electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD) from a SiH4 and H2 mixture.The effect of interface layer on the deposition of polycrystalline silicon film by ECR-PECVD was studied.The experiment shows that when the depositing temperature and H2 flow rate of the interface layer are 350 ℃ and 20 sccm,the polycrystalline silicon crystal grain diameter reach 53 nm,and with the increase of temperature,the crystallinity increases.更多还原