【摘要】 对原位 As₄掺杂 MBE HgCdTe 材料退火前后的电学性质进行了研究。原生样品以及 N 型退火样品的测试结果显示,随着 As 掺杂进入 HgCdTe 的同时,样品中产生了额外的 Hg 空位,并且在样品中引进了一种 N 型深能级结构。不同 Hg 分压下的激活退火结果显示,高温汞压下退火可以获得 P 型 MBE HgCdTe 材料。但是,真空退火结果显示 As 很难被激活。说明在激活退火过程中 As 在各个格点之间转移时,外界的 Hg 起重要作用。更多还原

【Abstract】 The study of the electrical properties of the arsenic doped as-grown and annealed MBE HgCdTe is presented.The results of the as-grown samples and N-type annealed samples show that additional V_Hg is produced and there are some donors which have deeper energy level during arsenic doping into HgCdTe.The results of annealed samples under different mercury pressures show that P-type MBE HgCdTe could be obtained by doping with the As₄ source and annealing with high temperature.But result of vacuum-anneals show arsenic is hard to activated as acceptors in this condition.It shows that the ambient mercury plays an important role in the site-transfer process during the activation anneals.更多还原