【摘要】 介绍了 AlGaAs/GaAs 多量子阱红外探测器(QWIP)暗电流与噪声的关系和降低暗电流的途径;基手湿法化学腐蚀工艺制作了300μm×300μm台面单元器件,并用变温液氦杜瓦测试系统在不同温度下对红外探测器暗电流进行了测试并分析。在温度小于40 K 时,随着温度的改变暗电流没有明显的变化;当温度大于40 K 时,暗电流随着温度的升高迅速变大,正、负偏压下 QWIP 暗电流具有不对称特性。更多还原

【Abstract】 The relationship of the dark current and noise as well as the method to reduce the dark current for AlGaAs/GaAs quantum well infrared photodetector(QWIP)is described.The large area device with a mesa of 300 μm ×300 μm is fabricated by wet chemical etching process.The dark current performance at different temperature is analyzed with a cryogenic dewar cooled by liquid Helium.The dark current dose not change with the temperature under 40 K;However it increases rapidly with the temperature above 40 K.In addition,the positive and negative bias QWIP dark current is asymmetric behavior.更多还原