【摘要】 采用CVD方法制备了Ir/Re复合材料。研究了Ir层中Ir晶粒的形貌和生长特点,计算得到Ir晶粒生长动力学方程:(x2-x02)/t=4.31×103exp(-2.65eV/kT)(μm2·s-1)。研究了CVD过程中Re层表面晶粒生长和V,W型浸蚀纹的关系。对靠近Ir层的细晶粒区和Re层中部的柱状晶粒区中Re晶粒的再结晶长大进行了研究,计算得到柱状晶区中Re晶粒的生长动力学方程:(x2-x02)/t=2.55×103exp(-1.52eV/kT)(μm2·s-1),研究了Ir/Re扩散、Re扩散对细晶区中Re晶粒生长动力学的影响。更多还原

【Abstract】 Iridium/Rhenium composite was prepared by chemical vapor deposition （CVD）. Not only microstructure of iridium layer was studied, but also got iridium grain growth kinetic equation: （x₂-x₀²）/t=4.31×10³exp（-2.65 eV/kT） (μm²·s^-1). Relationship between V, W etch net and growth of rhenium grain which on the surface of rhenium layer during CVD was achieved. Both rhenium grain recrystallization of column grain zone that in the middle of rhenium layer and fine grain zone that near Iridium layer was researched. Rhenium grain growth kinetic equation was: （x₂-x₀²）/t=2.55×10³exp（-1.52 eV/kT） (μm²·s^-1) in column grain zone. In fine grain zone, both iridium/rhenium diffusion and rhenium self-diffusion affected kinetics of rhenium grain growth.更多还原