【摘要】 铁电/介电BST(B axS r1-xT iO3)薄膜在微电子学、集成光学和光电子学等新技术领域有广泛的应用前景。用射频磁控溅射方法制备了厚约700 nm的B a0.5S r0.5T iO3薄膜,采用A l/BST/ITO结构研究了溅射功率、溅射气压、O2/(A r+O2)比和基片温度对上述BST薄膜沉积速率和介电性能的影响,并根据这些结果分析了较优的工艺条件,同时用XRD、XPS和SEM研究了薄膜的晶相、组成和显微结构。更多还原

【Abstract】 Ferroelectric/dielectric BST(Ba_xSr_1-xTiO₃)thin films have broadly prospective applications in new technology fields,such as microelectronics,integrated optics and photo electronics.The Ba_0.5Sr_0.5TiO₃ thin films about 700 nm thick were prepared by rf magnetron sputtering process,using an Al/BST/ITO architecture to investigate the impact of sputtering power,gas pressure,O₂/（Ar+O₂） ratio and substrate temperature on the deposition rate and dielectric properties of the BST thin films.An optimal process was thus concluded from the investigation results with XRD,XPS and SEM used to analyze the crystalline phase,composition and microstructure of the films deposited by the optimum process.更多还原