【摘要】 氮化镓是直接带隙半导体材料,在室温下有很宽的带隙(3.39eV).它在光电子器件如蓝光、紫外、紫光等光发射二极管和激光二极管方面有着重要的应用.本文系统介绍了氮化镓的各种制备方法,对其结构和性能关系的研究,揭示了它在半导体领域广泛且重要的应用前景.更多还原

【Abstract】 Gallium nitride is a novel kind of semiconductor,whose direct band gap is 3.39eV at the room temperature. It has been proved to be a promising material for electronic and photoelectric devices. A good many of its growth methods have been discovered,and some of them had been implemented in production practice with monitoring systems. Some comparisons were made between different methods. The structure-performance dependence of GaN itself, GaN-based family and multinitrides have been summarized. The main fields of GaN-based material were presented. GaN-based material is being considered to be the excellent candidate of electronic device potentially used in high-temperature,high-power and worst environment surroundings.更多还原