【摘要】 本文利用六甲基二硅氧烷(HMDSO)作为硅的先驱粒子,氮或氩气为稀释气体,进行了大气压等离子体化学气相沉积类二氧化硅薄膜的实验研究。运用红外光谱(FTIR)、光电子能谱(XPS)和扫描电镜(SEM)对沉积的薄膜进行结构和表面分析。实验表明,当功率一定时,在低的HMDSO含量下,硅衬底上得到了一层平整、致密、连续的薄膜沉积。红外吸收谱分析呈现出明显的Si-O-Si吸收峰,表明了类二氧化硅结构,其中的[Si]/[O]含量比达到1∶1.56。当HMDSO含量增加时,薄膜中含碳键成分增加,薄膜表面的大颗粒增多。相对地氮气而言,氩气在大气压下更容易获得稳定均匀的等离子体和更大的生长速率/功率比。更多还原

【Abstract】 SiO_x films were grown on Si substrates by dielectric barrier discharge(DBD) plasma-enhanced-chemical-vapor-deposition(PE-CVD) with hexamethyl-disiloxane(HMDSO) diluted by nitrogen and/or argon as source gases.The films were characterized with Fourier transform infra-red(FTIR),X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM).The results show that smooth,compact,and continuous SiO_x films can grow on Si substrate at an appropriate power and fairly low HMDSO content.Pronounced absorption peak in FTIR spectra confirms the silica structure,and the /[O] content ratio is estimated to be 1∶1.56.As HMDSO content rises,the density of carbon bond increases and more larger grains can be observed. Atmospheric pressure argon can do a better job than nitrogen in generating a uniform,stable plasma and in obtaining a high deposition ratio to power.更多还原