【摘要】 利用中频磁控溅射方法,溅射Ga2O3含量为6.7wt%的氧化锌镓陶瓷靶材,在低温下(约40℃)制备了ZGO薄膜。考察了溅射功率密度对ZGO薄膜的晶体结构、电学和光学性能的影响。结果表明:溅射功率密度对薄膜的结构、红外反射以及导电性能有较大影响。当溅射功率密度为3.58W/cm2,氩气压力为0.8Pa时,薄膜的电阻率低达1.5×10-3Ω·cm,方块电阻为23Ω时,可见光(λ=400nm～800nm)平均透过率高于90%。更多还原

【Abstract】 Ga-doped ZnO （ZGO） thin films have been prepared by middle-frequency alternative magnetron sputtering at low substrate temperature （about 40℃） with sputtering ceramic target containing ZnO and 6.7wt% Ga₂O₃.Influence of target power density on the microstructures,optical and electrical properties of ZGO films have been studied.The results show that target power density strongly affect the microstructures,infrared reflection and electrical conductive properties of ZGO thin films.Under the deposition conditions of 3.58 W/cm² sputtering power density and 0.8Pa sputtering gas pressure,ZGO thin films with the best comprehensive performances can be obtained,i.e. its resistivity is as low as 1.5×10^-3 Ω·cm,its sheet resistance of 23 Ω,and an average visible transmittance （from 400 to 800 nm） higher than 90%.更多还原