【摘要】 在利用扫描隧道显微镜(STM)对Ag-TCNQ薄膜进行“接触”式的I-V特性测量中,发现由于接触势垒引起的整流效应。这为有机分子在电子学的应用方面,提供一种新的思路,从而设计新的有机电子器件。更多还原

【Abstract】 On I-V measurement of Ag-TCNQ thin film by Scanning Tunneling Microscope(STM) of contact mode,rectifying effect caused by Schottky barrier is found.It supplies a new design idea for application of organic compounds on electronics,so as to create new types of organic electronic devices.更多还原