【摘要】 采用基底曲率法测量了硅基铁电微声学器件中各层薄膜的残余应力情况,通过调节热氧化的二氧化硅层的厚度,优化了微声学器件中复合膜的残余应力,得到平整的振膜结构,提高了器件的可靠性和成品率。更多还原

【Abstract】 The residual stresses in thin films of silicon-based ferroelectric micro-acoustic devices were measured by substrate curvature method. By adjusting the thickness of thermal silicon oxide layer, the residual stresses of the multilayer membrane structure are minimized and a flat thin multilayer membrane has been achieved, which enhances reliability and yield of the micro-acoustic devices.更多还原