【摘要】 基于脉冲激光沉积(PLD)技术在光寻址电位传感器(LAPS)表面上制备了Fe Ge Sb Se硫系玻璃薄膜,合成的靶材成分为Fe1.2(Ge28Sb12Se60)98.8,在Si/SiO2 基质上的金属层为Cr/Au,硫系玻璃薄膜对Fe3+敏感,显示了良好的重复性和稳定性.在1×10-5 ~1×10-2 mol/L呈现线性,斜率为(56±2) mV/decade,检测下限为5×10-6mol/L,当浓度高于1×10-4 mol/L时,响应时间不超过40 s;当低于此浓度时,响应时间不超过2 min.更多还原

【Abstract】 FeGeSbSe chalcogenide glass was deposited on the surface of a light-addressable potentiometric sensor （LAPS） by means of pulsed laser beam deposition （PLD） technique. Chalcogenide glass Fe_1.2(Ge₂₈Sb₁₂Se₄₀)_98.8 was prepared and used as the target material. An additional contact layer of Cr/Au was deposited onto Si/SiO₂ substrate. Chalcogenide glass thin film had high sensitivity towards iron（Ⅲ）ion and exhibits a good stability, repetition and linear feature with slope of about （56±2） mV/decade in the range of iron（Ⅲ）concentration 1×10^-5～1×10^-2 mol/L. The detection limit of the thin film sensor was 5×10^-6 mol/L. The response time does not exceed 40 s for iron（Ⅲ）ion concentration higher than 1×10^-4 mol/L, while the iron（Ⅲ）concentration is lower than the value, the response time is no more than 2 min.更多还原