【摘要】 为了在微机电系统(microelectromechanical systems,MEMS)器件中进行热驱动,提出了设计微电阻作为热源的方法.电阻是通过微晶硼硅玻璃在硅基底上进行二次热扩散的方法制备的,利用硼离子扩散制作的电阻可以提高热源加热效率.通过数值计算,建立了制备过程中硅基底中的硼离子的空间浓度分布的理论模型,优化了二次硼扩散工艺条件.盘旋形的电阻形状设计提供了良好的温度控制和热量利用率,加热温度可以从室温一直加热至200℃.测量得到了电阻的有效结深及方块电阻,实验结果表明,电阻内部扩散区域的结深非常浅,硼离子掺杂浓度非常高,与理论模拟基本吻合.更多还原

【Abstract】 In order to provide the heating element of microelectromechanical systems’ (MEMs’) thermal driving system, a kind of silicon substrate micro resistor was designed and produced. Two steps rapid thermal boron diffusion (RTBD) from borosilicate glass (BSG) was adopted to fabricate micro resistor. Boron doping was chosen to increase the heater’s temperature resistance coefficient within tolerable noise limits. The model of the Boron ion spread in wafer was analyzed by numerical simulation and the micro resistor fabrication conditions were optimized. The conventional serpentine design of the resistor provided better temperature control and better temperature uniformity. A wide range of temperature from ambient temperature to (200℃) could be obtained. The resistor performance indicated that the diffusion regions were extremely shallow and highly doped. The measured effective junction depth and sheet resistances of the resistor show good agreement with theoretical calculations.更多还原