【摘要】 采用阳极氧化法在 p型轻掺硅片上制备多孔硅,研究了电解液配比、电流密度和反应时间对多孔硅发光性能的影响.实验研究发现多孔硅形貌随氢氟酸浓度而变化,电流密度、电化学腐蚀时间对多孔硅的发光均有影响.随着氢氟酸浓度和电流密度的增大,多孔硅的光致发光光谱强度先变大后减小;随反应时间的延长,多孔硅的光致发光光谱峰强度增强.氢氟酸浓度、电流密度和反应时间对傅立叶红外光谱中与Si H、Si H2 键相关的振动峰具有明显影响,且与发光强度的变化相对应.结合多孔硅的成核理论、量子限制理论以及红外光谱中 Si H、Si H2 键红外振动峰的变化解释了上述现象.更多还原

【Abstract】 Porous silicon （PS） was fabricated by anodic oxidation on p-type lightly doped silicon wafer. The effects of HF concentration, anodic current and anodization time on the optical properties of PS were investigated. The surface structure of PS varied with the HF concentration. The photoluminescence intensity of PS depended on the HF concentration, anodic current and anodization time. The photoluminescence intensity of PS first increased then decreased when HF concentration and anodic current increased, while longer anodization time lead to higher photoluminesecence intensity. Si-H,Si-H₂ absorption lines of PS from FTIR depended on the HF concentration, anodic current, and anodic time. The optical properties of PS mentioned above were discussed based on the quantum effect theory, nucleation theory of PS, and the variation of Si-H, Si-H₂ absorption lines.更多还原