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Cu(SCN)2-水系电沉积制备CuSCN薄膜
Preparation of p-CuSCN Thin Film by Electrochemical Deposition in Aqueous Solution
【摘要】 用电化学沉积法,以水作溶剂,在ITO透明导电玻璃上制得p-CuSCN薄膜。探讨了Cu(SCN)2-在水溶 液中的不稳定性及EDTA络合对提高CuSO4和KSCN水溶液稳定性的作用。研究结果表明,未加EDTA络合 剂时,CuSO4和KSCN在水溶液中将分解成CuSCN和(SCN)x;加入EDTA可以制得稳定的CuSO4和KSCN的 水溶液;在-400mV恒电位下,在EDTA与Cu2+的摩尔比为1∶1的水溶液中可以制备出在可见光区透光性好 的CuSCN薄膜,薄膜的平均粒径约为50nm,是p型的β- CuSCN半导体,光学带隙为3.8eV,测得的表面电导 率为0.8×10-3S/cm。
【Abstract】 CuSCN thin films were prepared by the electrodeposition method from an EDTA-chelated Cu(Ⅱ) and KSCN aqueous solution. The instability of Cu(SCN)2 in water and function of EDTA complexant on improving the stability of CuSO 4 and KSCN solution were studied. The results show that Cu(SCN) 2 can transform into CuSCN and (SCN) x in the absence of EDTA; a stable aqueous electrolyte is obtained in the presence of EDTA. Transparent CuSCN thin film is prepared in an aqueous electrolyte when the molar ratio of Cu 2+ to EDTA is 1∶1 and Cu 2+ to SCN - 4∶1. The average crystal size of CuSCN thin film is 50 nm, band gap ~3.8 eV and conductivity up to 0.8×10 -3 S/cm.
- 【文献出处】 应用化学 ,Chinese Journal of Applied Chemistry , 编辑部邮箱 ,2005年02期
- 【分类号】TM914
- 【被引频次】11
- 【下载频次】209