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对称耦合量子阱能级特性研究与量子阱结构优化
Research on energy level properties of symmetric coupled quantum well and optimization for quantum well structures
【摘要】 采用无限深势阱模型分析对称耦合量子阱中最低子能级的形成,并利用二能级体系理论给出对称耦合量子阱中各子能级随外电场的变化规律。根据理论分析,指出了对称耦合量子阱在量子阱光开关应用中的优势和不足,并提出了一种新的耦合量子阱结构——准对称耦合量子阱。
【Abstract】 <Abstrcat> In this paper, the formation of the lowest subband states in symmetric coupled quantum-well is discussed with the use of an infinite-potential-well model, and the evolvement rules of the lowest subband states in the presence of an electric field along the direction of the well are analyzed with the use of two-energy-level system at length. With that, basing on the theoretical analysis for the symmetric coupled quantum-well, we point out its advantage and disadvantage when it is applied to optical switch structure, and finally put forward the conception of quasi-symmetric coupled quantum-well.
【Key words】 infinite-potential-well model; symmetric coupled quantum well; quasi-symmetric coupled quantum well;
- 【文献出处】 浙江科技学院学报 ,Journal of Hangzhou Institute of Applied Engineering , 编辑部邮箱 ,2005年02期
- 【分类号】TN25
- 【被引频次】1
- 【下载频次】91