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n+p组合结构气体传感器选材原则研究

Study on Choosing Sensitive Material Principle of n+p Combined Structure Semiconductor Gas Sensor

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【作者】 杨留方谢永安李开毅赵鹤云吴兴惠

【Author】 YANG Liu-fang 1,2 XIE Yong-an 1 LI Kai-yi 1 ZHAO He-yun 3 WU Xing-hui 3 (1.Physics and Educational Technology Dept., Yuxi Teachers’ College, Yuxi, Yunnan 653100; 2.Faculty of Material and Metallurgy Engineering, Kunming University of Science and Technology, Kunming Yunnann 650093;3.Saba Transduction Technology Research Center of Yunnan University, Kunming, Yunnan 650091)

【机构】 玉溪师范学院物理与教育技术系云南大学佐波传感技术研究中心云南大学佐波传感技术研究中心 云南玉溪653100 昆明理工大学材料与冶金工程学院云南昆明650093云南玉溪653100云南昆明650091云南昆明650091

【摘要】 n+p型半导体气体传感器是基于气体传感器互补增强和互补反馈原理的一种新结构半导体气体传感器。该种传感器是由两种传导类型不同的敏感体A和B构成,A是n型半导体材料,B是p型半导体材料。理论分析表明,敏感体A和B的选择必须满足一定的原则,才能实现该种传感器的高性能。

【Abstract】 n+p structure semiconductor gas sensor based on the compensation-multiplication and compensation-feedback principle is a new type gas sensor. The sensor is composed of two sensitive materials: A and B, whose conductive types are not the same. Material A is a n-type, and B is a p-type. The results analyzed from the theoretical viewpoint showed that the n+p combined structure semiconductor gas sensor has better properties when the materials A and B satisfied certain conditions. The conditions to achieve these characteristics of the n+p combined structure semiconductor gas sensor are presented.

【基金】 云南省科技厅中日国际合作项目(95E007)
  • 【文献出处】 玉溪师范学院学报 ,Journal of Yuxi Teachers College , 编辑部邮箱 ,2005年06期
  • 【分类号】TP212
  • 【下载频次】63
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