【摘要】 采用XeCl准分子脉冲激光退火技术制备了纳米晶态碳化硅薄膜(nc-SiC),并对薄膜的喇曼光谱和光致发光(PL)特性进行了分析.结果表明,nc-SiC薄膜在室温条件下表现出谱带为300~600 nm范围内的较宽光致发光,随退火激光能量密度的增加,nc-SiC薄膜晶化程度增大,原子有序度提高,398 nm附近的发光峰相对强度增加,而470 nm附近发光峰相对减小.并认为这2个发光峰分别来源于6H-SiC导带到价带间的复合发光和缺陷态发光,并且这2种发光过程存在竞争.更多还原

【Abstract】 Nanocrystalline silicon carbon(nc-SiC)from amorphous silicon carbon films have been obtained through XeCl excimer laser annealing.The Raman and photoluminescence(PL) of the nc-SiC is analyzed at different annealing laser energy density.It has been observed that PL presented a wide luminescence band from 300—600?nm in the nc-SiC films.With the laser energy density increasing,the degree of crystalline order of the films is enhanced.The two main luminescence bands,situated at 398?nm and 470?nm separately,is attributed to band to band and defect recombination in the 6H-SiC based on the structure changes of the nc-SiC films.The relative PL intensity of these two bands is determined by the surface state density in the nc-SiC films and their irradiative life time.更多还原