【摘要】 采用溶胶-凝胶工艺在普通玻璃片上制备了ZnO∶Al薄膜。通过XRD、UV透射谱和电学测试等分析方法研究了掺Al对薄膜的组织结构和光电性能的影响。分析表明:所制备的薄膜具有c轴择优取向,随着掺Al浓度的增加,(002)峰向低角度移动,峰强逐渐减弱。薄膜电阻率随掺Al浓度变化,当掺Al浓度为1.5%(摩尔分数),薄膜电阻率降至6.2×10-4Ω·cm。掺Al量的增加同时使得薄膜的禁带宽度变大,光吸收边出现蓝移现象。更多还原

【Abstract】 Pure and Al doped ZnO thin films were fabricated on glass substrates by sol-gel method. It is found that all the thin films have a preferential c-axis orientation. With increase of Al doping, the peak position of the （002） plane is shifted to the low 2θ value. A minimum resistivity of 6.2×10^-4 Ω·cm is obtained for the film doped with 1.5 % Al. However, the resistivity increases with increasing Al concentration. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with Al has the effect of shifting the optical absorption to the shorter wavelength, which both cases are attributed to the Burstein-Moss shift.更多还原