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退火处理对ITO表面特性及有机发光器件性能的影响
Influence of Annealing Treatment on ITO Surface and OLED Performances
【摘要】 为了改善有机发光器件(OLEDs)的性能,在0~600℃不同温度下对ITO透明导电玻璃进行了退火处理。SEM观察到随退火温度的升高,ITO表面粗糙度增加;四探针电阻测试结果显示,在300℃以上温度退火后ITO表面电阻率有明显增加。用退火前后的ITO玻璃作为阳极制备了OLEDs,器件结构为ITO/TPD/Alq3/Al,比较器件的电流密度-电压特性曲线测试结果表明,ITO薄膜的热处理温度对OLEDs性能有显著的影响。
【Abstract】 The characteristics of indium tin oxide (ITO) films deposited on glass substrates were investigated by thermal annealing at different temperature in the range from 0 ℃ to 600 ℃ to improve their quality for use in organic light-emitting diodes (OLEDs). The morphology of the ITO films surface was significantly changed by the treatment as observed by scanning electron microscopy (SEM). At higher temperatures (>300 ℃), the shift resistance obviously increases with increasing of annealing temperature. The electrical and optical characteristics of OLEDs with the structure of ITO/TPD/Alq3/Al, prepared on pre-treated and untreated ITO substrates, were determined and compared. The results show that the performances of OLEDs are influenced remarkably by ITO substrates annealed at different temperature.
- 【文献出处】 液晶与显示 ,Chinese Journal of Liquid Crystals and Displays , 编辑部邮箱 ,2005年06期
- 【分类号】TN312.8
- 【被引频次】13
- 【下载频次】513