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掺杂浓度对AZO薄膜结构和光电性能的影响

Influence of the Dopant Concentration on Its Microstructure,Electrical and Optical Properties of Al:ZnO Film

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【作者】 葛春桥

【Author】 GE Chun-qiao(Dept.of Material Science and Engineering,Huazhong University Science of Technology,Wuhan 430074,China)

【机构】 华中科技大学材料科学与工程学院 湖北武汉430074

【摘要】 采用溶胶-凝胶(Sol-Gel)工艺在普通玻璃基片上成功地制备出高c轴择优取向性、高可见光透过率和低电阻率的Al3+掺杂型的ZnO透明导电薄膜,对这种薄膜进行了X-射线衍射和扫描电镜分析,并对其光电性能作了详细的研究。结果表明,制备的薄膜为钎锌矿型结构,呈c轴方向择优生长;其可见光透过率可达85%以上;Al3+掺杂型的ZnO透明导电薄膜的电阻率在1.5×10-2~8.2×10-2Ω.cm。

【Abstract】 In this paper,Al:ZnO films on glass substrate were prepared by Sol-Gel method successfully with highly preferred orientation along the(002) plane,high transmittance in the UV,US and near IR ranges and low electrical resistivity.Their microstructures,electrical and optical properties were studied with X-ray diffraction spectroscopy(XRD) and SEM.The result showed that they had a polycrystalline hexagonal wurtzite structure with highly preferred orientation along the(002) plane,their optical transmittance were over 85% and their electrical resistivity varied from 1.5×10-2 Ω·cm to 8.2×10-2 Ω·cm.

  • 【文献出处】 压电与声光 ,Piezoelectrics & Acoustooptics , 编辑部邮箱 ,2005年06期
  • 【分类号】TN304.055
  • 【被引频次】12
  • 【下载频次】273
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