【摘要】 采用RF磁控溅射法在12.7 cm的PZT/P t/T i/S iO2/S i基片上制备了PZFNT薄膜,后处理采用快速退火工艺,对不同退火温度的薄膜进行了分析。实验结果表明,采用PZT缓冲层对PZFNT薄膜的性能有显著的影响,可明显降低PZFNT薄膜的晶化温度,提高其介电和铁电性能。在优化工艺条件下,可获得介电常数和损耗分别为1 328和3.1%,剩余极化和矫顽场分别为29.8μC/cm2和46 kV/cm的铁电薄膜,该薄膜可望在铁电存储器和热释电红外探测器中得到应用。更多还原

【Abstract】 PZFNT thin films were fabricated on 12.7 cm PZT/Pt/Ti/SiO₂/Si substrates by a RF magnetron sputtering method and rapid thermal annealing process. By investigating the thin films at various annealing temperatures, the results show that the annealing temperature is decreased remarkably, and the dielectric and ferroelectric properties are improved by using PZT buffer layer. In the optimum process, the thin films have the dielectric constant of 1 328 and dielectric loss of 3.1% at 1 kHz. The remanent polarization and coercive field of the thin films are 29.8 μC/cm² and 46 kV/cm, respectively. This films have the significant potential for FeRAM and pyroelectric infrared detectors.更多还原