【摘要】 采用CH4+Ar混合等离子体对p-Si(100)进行剂量为5.0×1017cm-2,能量分别为40keV及80keV的碳离子注入,靶温控制在700°C左右;注入后将样品在1250°C的氩气中退火5h。通过红外反射光谱、掠角X-射线衍射以及剖面透射电镜对退火前后的样品进行分析,其结果证明了结晶质量较好的多晶β-SiC不连续埋层的形成。更多还原

【Abstract】 CH₄+Ar plasma were implanted into p-Si （100） substrates by C⁺ ion implantation with a dose of (5.0×10¹⁷ cm^-2) at about 700 °C, followed by high temperature annealing at 1 250 °C in Ar for 5 h. The formation of discrete polycrystalline SiC buried layer was substantiated by Infrared reflection spectroscopy （IRRS）, glanced-angle x-ray diffraction （GAXRD） and cross-section transmission electron microscope （XTEM）.更多还原